High-Thermal Si3N4 Ceramic Substrates

Key Features:
✔ Ultra-High Thermal Conductivity (90-120 W/mK)
✔ Low CTE (3.2×10⁻⁶/°C) Matches Semiconductor Materials
✔ 99.9% Purity Grade for Electronics Applications
✔ Superior Dielectric Strength >15 kV/mm

Applications:
• Power Electronics Insulation (IGBT, LED, RF Modules)
• Hybrid Circuit Substrates
• High-Frequency Device Carriers

Tech Specs:

• Surface Roughness: Ra ≤0.1μm (Polished)
• Flexural Strength: ≥800 MPa
• Operating Temp: -60°C to 1200°C

Why Choose Us?
ISO 9001-certified production with laser micron-level thickness control (±0.02mm tolerance)